MtronPTI組件和子組件設(shè)計(jì)和測(cè)試能力XO5082-020SR
來源：http://eitherspanlaw.com 作者：億金電子 2024年04月11
組件和子組件設(shè)計(jì)和測(cè)試能力.jpg)
MtronPTI組件和子組件設(shè)計(jì)和測(cè)試能力XO5082-020SR
MtronPTI高功率處理空間級(jí)組件和子組件設(shè)計(jì)和測(cè)試能力
MtronPTI在衛(wèi)星平臺(tái)和載人飛船方面獲得了超過125項(xiàng)設(shè)計(jì)勝利。憑借支持低地球軌道、中地球軌道和地球同步軌道應(yīng)用的專業(yè)知識(shí)，MtronPTI進(jìn)口晶振公司擁有一支成熟的團(tuán)隊(duì)和久經(jīng)考驗(yàn)的記錄，可以滿足苛刻的空間要求。
隨著對(duì)高功率空間級(jí)發(fā)射機(jī)需求的不斷發(fā)展，高功率處理空間級(jí)射頻組件和子組件對(duì)任務(wù)的成功至關(guān)重要。由于多重放電等現(xiàn)象，這些在軌道衛(wèi)星上使用的設(shè)備的性能與它們?cè)诤Ｆ矫嫔系男阅苡泻艽蟛煌?。一些空間級(jí)應(yīng)用既要求在外層空間的連續(xù)運(yùn)行性能，也要求在進(jìn)入空間期間的性能，即在溫度范圍內(nèi)經(jīng)歷從環(huán)境壓力到1×10-5托的壓力變化以避免電暈放電。了解進(jìn)入太空和在軌期間大功率處理射頻組件和子組件的能力對(duì)于成功的太空任務(wù)至關(guān)重要。在早期階段檢測(cè)潛在風(fēng)險(xiǎn)可以防止災(zāi)難性故障。
除了現(xiàn)有的內(nèi)部測(cè)試能力之外1為了測(cè)試空間級(jí)組件和射頻組件，MtronPTI石英晶振公司投資了Spark3D等模擬工具，以在設(shè)計(jì)過程的早期階段最大限度地提高真空下的功率處理能力。MtronPTI還投資了一個(gè)高空（低壓）試驗(yàn)箱，以支持高功率處理射頻組件和子組件測(cè)試。海拔試驗(yàn)箱的加入使MtronPTI能夠在將測(cè)試產(chǎn)品暴露在接近1 x 10的壓力下時(shí)調(diào)節(jié)環(huán)境試驗(yàn)箱的溫度-5托。通過結(jié)合Spark3D模擬和高空測(cè)試，MtronPTI提高了任務(wù)成功的概率。
MtronPTI航天級(jí)產(chǎn)品符合美國(guó)國(guó)家標(biāo)準(zhǔn)協(xié)會(huì)/AIAA S-142-2016《航天器部件中預(yù)防多次放電擊穿的標(biāo)準(zhǔn)/手冊(cè)》。
注1 : MtronPTI廣泛的內(nèi)部測(cè)試能力包括根據(jù)MIL-STD-202的熱沖擊、方法107根據(jù)MIL-STD-202的端子強(qiáng)度、方法211根據(jù)MIL-STD-202的機(jī)械沖擊、方法213根據(jù)MIL-STD-202的總泄漏測(cè)試、方法112根據(jù)MIL-STD-202的隨機(jī)振動(dòng)、方法214A根據(jù)MIL-STD-202的氦氣、方法112根據(jù)MIL-STD-202的正弦振動(dòng)
MtronPTI組件和子組件設(shè)計(jì)和測(cè)試能力XO5082-020SR
MtronPTI High Power Handling Space Level Component and Sub-Assemblies Design and Testing Capabilities
MtronPTI has over 125 design wins across satellite platforms and manned spacecraft. With expertise supporting LEO, MEO and GEO applications, MtronPTI has a well-established team and a proven track record to meet demanding space requirements.
With the evolving need for high-power space-level transmitters, high-power handling space-level RF components and sub-assemblies are instrumental for mission success. The performance of these devices used in orbiting satellites are significantly different compared to how they perform at sea level due to phenomena like multipaction. Some space-level applications require both continuous operation performance in outer space as well as performance during the assent to space, i.e. undergoing a pressure change from ambient to 1 x 10-5 Torr over temperature to avoid corona discharge. Understanding the capability of the high-power handling RF components and sub-assemblies during the assent to space and in orbit is critical for successful space missions. Detecting potential risks at an early stage prevents a catastrophic failure.
In addition to existing in-house testing capabilities1 for testing space level components and RF assemblies, MtronPTI has invested in simulation tools like Spark3D™ to maximize power handling capability under vacuum in the early stages of the design process. MtronPTI has also invested in a altitude (hypobaric) chamber to support high power handling RF components and sub-assemblies testing. The incorporation of an altitude test chamber enables MtronPTI to adjust the temperature of the environmental test chamber while exposing the product under test to pressure approaching 1 x 10-5 Torr. By combining Spark3D simulations and altitude testing, MtronPTI enhances the probability of mission success.
MtronPTI space-level products comply with ANSI/AIAA S-142-2016, Standard/Handbook for Multipactor Breakdown Prevention in Spacecraft Components.
Note 1 : MtronPTI’s extensive in-house test capabilities include Thermal Shock per MIL-STD-202, Method 107 • Terminal Strength per MIL-STD-202, Method 211 • Mechanical Shock per MIL-STD-202, Method 213 • Gross Leak Testing per MIL-STD-202, Method 112 • Random Vibration per MIL-STD-202, Method 214A • Fine Leak Testing – Helium per MIL-STD-202, Method 112 • Sinusoidal Vibration per MIL-STD-202, Method 201 and 204 • PIND (Particle Impact Noise Detection) per MIL-STD-202, Method 217 • Other Miscellaneous Testing including: Life, Immersion, Humidity, Barometric Pressure, Solderability • Dielectric Withstanding Voltage, Insulation Resistance, RF Testing 100 kHz to 40 GHz.
| 產(chǎn)品編碼 | 晶振代理商 | 型號(hào) | 振蕩器類型 | 頻率穩(wěn)定性 | 頻率（MHz） |
| XO5085-012R | MtronPTI晶振 | XO5085 | OCXO | ±100 ppb | 100MHz |
| XO5083-053R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-053V | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5084-019 | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5084-031R | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 12.8MHz |
| XO5084-057SR | MtronPTI晶振 | XO5080 | OCXO | ±29 ppb | 10MHz |
| XO5081-015R | MtronPTI晶振 | XO5080 | OCXO | ±1 ppm | 100MHz |
| XO5081-047R | MtronPTI晶振 | XO5080 | OCXO | ±0.5 ppm | 80MHz |
| XO5081-048SR | MtronPTI晶振 | XO5080 | OCXO | ±50 ppb | 40MHz |
| XO5081-062 | MtronPTI晶振 | XO5080 | OCXO | ±0.2 ppm | 100MHz |
| XO5081-067R | MtronPTI晶振 | XO5080 | OCXO | ±0.2 ppm | 100MHz |
| XO5081-068 | MtronPTI晶振 | XO5080 | OCXO | ±0.2 ppm | 100MHz |
| XO5082-016R | MtronPTI晶振 | XO5080 | OCXO | ±280 ppb | 100MHz |
| XO5082-020SR | MtronPTI晶振 | XO5080 | OCXO | ±0.3 ppm | 100MHz |
| XO5083-020 | MtronPTI晶振 | XO5080 | OCXO晶振 | ±10 ppb | 10MHz |
| XO5083-028R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-046R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-051R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-052R | MtronPTI晶振 | XO5080 | OCXO | ±5 ppb | 10MHz |
| XO5083-059R | MtronPTI晶振 | XO5080 | OCXO | ±5 ppb | 10MHz |
| XO5083-064 | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-067SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5083-078SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5083-079SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5083-081R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-104R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-106R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-108R | MtronPTI晶振 | XO5080 | OCXO | ±25 ppb | 10MHz |
| XO5083-113R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-114R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5083-118SR | MtronPTI晶振 | XO5080 | OCXO | ±20 ppb | 10MHz |
| XO5084-034SR | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
| XO5084-043R | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 12.8MHz |
| XO5084-044SR | MtronPTI晶振 | XO5080 | OCXO | ±10 ppb | 10MHz |
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此文關(guān)鍵字： 石英晶體振蕩器
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